NDC7002N, Транзистор МОП n-канальный двойной 50В 0,51A 0,96 SOT6

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94 руб.

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Добавить в корзину 5 шт. на сумму 470 руб.

Номенклатурный номер: 8004543114

Артикул: NDC7002N

Описание Транзистор МОП n-канальный двойной 50В 0,51A 0,96 SOT6 Характеристики

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	6 ns
Id - Continuous Drain Current:	510 mA
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	SSOT-6
Part # Aliases:	NDC7002N_NL
Pd - Power Dissipation:	960 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Qg - Gate Charge:	1 nC
Rds On - Drain-Source Resistance:	2 Ohms
Rise Time:	6 ns
Series:	NDC7002N
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	6 ns
Vds - Drain-Source Breakdown Voltage:	50 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	510 mA
Maximum Drain Source Resistance	4 Ω
Maximum Drain Source Voltage	50 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	960 mW
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOT-23
Pin Count	6
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	1 nC @ 10 V
Width	1.7mm
Вес, г	0.01