PSMN5R5-60YS,115, MOSFET PSMN5R5-60YS/SOT669/LFPAK

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460 руб.

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Номенклатурный номер: 8006405383

Артикул: PSMN5R5-60YS,115

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор N-МОП, полевой, 60В, 74А, 130Вт, LFPAK33 Характеристики

Brand:	Nexperia
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	1500
Id - Continuous Drain Current:	100 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-669-5
Part # Aliases:	934064397115
Pd - Power Dissipation:	130 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	56 nC
Rds On - Drain-Source Resistance:	8.3 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4.6 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Resistance	8.3 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	130 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	LFPAK, SOT-669
Pin Count	4
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	56 nC @ 10 V
Width	4.1mm
Вес, г	0.09