SI2307-TP, Транзистор
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Описание
Split Gate Technology MOSFETs MCC Split Gate Technology MOSFETs support extremely low RDS(ON) that allows higher current density in smaller packages. These MOSFETs support increased BVdss, higher N-doping, and decreased Qgd that reduces charge coupling. These SGT MOSFETs feature improved Figure of Merit (FOM) that reduces switching and conduction losses. Typical applications include space saving and high efficiency requirement applications.
Технические параметры
| Brand: | Micro Commercial Components(MCC) |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 17 ns |
| Forward Transconductance - Min: | 7 S |
| Id - Continuous Drain Current: | 2.7 A |
| Manufacturer: | Micro Commercial Components(MCC) |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Pd - Power Dissipation: | 1.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.2 nC |
| Rds On - Drain-Source Resistance: | 73 mOhms |
| Rise Time: | 40 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 40 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.008 |
Техническая документация
Datasheet
pdf, 1027 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
