SI4425DDY-T1-GE3, Транзистор полевой P-канальный 30В 19.7А 5.7Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой P-канальный 30В 19.7А 5.7Вт
Технические параметры
| Корпус | so-8 | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 19.7 A | |
| Maximum Drain Source Resistance | 0.0165 O | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Series | TrenchFET | |
| Automotive | No | |
| Configuration | Single Quad Drain Triple Source | |
| ECCN (US) | EAR99 | |
| Lead Shape | Gull-wing | |
| Maximum Continuous Drain Current (A) | 19.7 | |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 13 | |
| Maximum Diode Forward Voltage (V) | 1.2 | |
| Maximum Drain Source Resistance (mOhm) | 9.8@10V | |
| Maximum Drain Source Voltage (V) | 30 | |
| Maximum Gate Resistance (Ohm) | 4.2 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Gate Threshold Voltage (V) | 2.5 | |
| Maximum IDSS (uA) | 1 | |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 85 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Positive Gate Source Voltage (V) | 20 | |
| Maximum Power Dissipation (mW) | 2500 | |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 | |
| Minimum Gate Resistance (Ohm) | 0.4 | |
| Minimum Gate Threshold Voltage (V) | 1.2 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 8 | |
| PPAP | No | |
| Process Technology | TrenchFET | |
| Product Category | Power MOSFET | |
| Standard Package Name | SO | |
| Supplier Package | SOIC N | |
| Typical Diode Forward Voltage (V) | 0.8 | |
| Typical Drain Source Resistance @ 25°C (mOhm) | 13.7@4.5V|8.1@10V | |
| Typical Fall Time (ns) | 15|9 | |
| Typical Gate Charge @ 10V (nC) | 53 | |
| Typical Gate Charge @ Vgs (nC) | 53@10V|27@4.5V | |
| Typical Gate Plateau Voltage (V) | 3.2 | |
| Typical Gate to Drain Charge (nC) | 13 | |
| Typical Gate to Source Charge (nC) | 8 | |
| Typical Input Capacitance @ Vds (pF) | 2610@15V | |
| Typical Output Capacitance (pF) | 460 | |
| Typical Reverse Recovery Charge (nC) | 10 | |
| Typical Reverse Recovery Time (ns) | 20 | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 395@15V | |
| Typical Rise Time (ns) | 41|9 | |
| Typical Turn-Off Delay Time (ns) | 36|42 | |
| Typical Turn-On Delay Time (ns) | 52|12 | |
| Вес, г | 0.2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
