SI4447DY-T1-GE3
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210 руб.
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180 руб.
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Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | NRND |
| Product Category | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Voltage (V) | ±16 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Continuous Drain Current (A) | 3.3 |
| Maximum Drain Source Resistance (mOhm) | 72@15V |
| Typical Gate Charge @ Vgs (nC) | 9@4.5V |
| Typical Gate to Drain Charge (nC) | 3.6 |
| Typical Gate to Source Charge (nC) | 2 |
| Typical Reverse Recovery Charge (nC) | 17 |
| Typical Input Capacitance @ Vds (pF) | 805@20V |
| Typical Output Capacitance (pF) | 120 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Fall Time (ns) | 38 |
| Typical Rise Time (ns) | 12 |
| Typical Turn-Off Delay Time (ns) | 74 |
| Typical Turn-On Delay Time (ns) | 8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Pin Count | 8 |
| Supplier Package | SOIC N |
| Standard Package Name | SOP |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Length | 5(Max) |
| Package Width | 4(Max) |
| PCB changed | 8 |
| Lead Shape | Gull-wing |
| Вес, г | 0.187 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
