SI7149DP-T1-GE3, Силовой МОП-транзистор, P Канал, 30 В, 50 А, 0.0042 Ом, SOIC, Surface Mount
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Описание
Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторы
Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK SO EP T/R
Технические параметры
Brand | Vishay/Siliconix |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 16 ns |
Forward Transconductance - Min | 47 S |
Id - Continuous Drain Current | 50 A |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | PowerPAK-SO-8 |
Packaging | Cut Tape or Reel |
Part # Aliases | SI7149DP-GE3 |
Pd - Power Dissipation | 69 W |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 98 nC |
Rds On - Drain-Source Resistance | 5.2 mOhms |
Rise Time | 14 ns |
Series | SI7 |
Subcategory | MOSFETs |
Technology | Si |
Tradename | TrenchFET |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 58 ns |
Typical Turn-On Delay Time | 15 ns |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs Th - Gate-Source Threshold Voltage | 1.2 V |
Automotive | No |
Channel Type | P |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 50 |
Maximum Drain Source Resistance (mOhm) | 5.2@10V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±25 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 5200 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | NRND |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | TrenchFET |
Supplier Package | PowerPAK SO EP |
Typical Fall Time (ns) | 16|36 |
Typical Gate Charge @ 10V (nC) | 98 |
Typical Gate Charge @ Vgs (nC) | 98@10V|51@4.5V |
Typical Input Capacitance @ Vds (pF) | 4590@15V |
Typical Rise Time (ns) | 14|135 |
Typical Turn-Off Delay Time (ns) | 52|58 |
Typical Turn-On Delay Time (ns) | 15|79 |
Вес, г | 0.127 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов