SIA416DJ-T1-GE3, Силовой МОП-транзистор, N Канал, 100 В, 11.3 А, 0.068 Ом, PowerPAK SC70, Surface Mount
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190 руб.
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Описание
ThunderFET® Power MOSFETs
Vishay / Siliconix ThunderFET® Power MOSFETs provide low values of on-resistance for 100V MOSFETs with 4.5V ratings. The lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Vishay / Siliconix ThunderFET Power MOSFETs are optimized for primary-side switching and secondary-side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The 4.5V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Vishay / Siliconix ThunderFET® Power MOSFETs provide low values of on-resistance for 100V MOSFETs with 4.5V ratings. The lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Vishay / Siliconix ThunderFET Power MOSFETs are optimized for primary-side switching and secondary-side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The 4.5V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 10 ns |
Forward Transconductance - Min: | 8 S |
Id - Continuous Drain Current: | 11.3 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SC-70-6 |
Pd - Power Dissipation: | 19 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 10 nC |
Rds On - Drain-Source Resistance: | 68 mOhms |
Rise Time: | 13 ns |
Series: | SIA |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET, PowerPAK |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 10 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
Вес, г | 0.24 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов