SIRA99DP-T1-GE3, MOSFET 30V P-CHANNEL (D-S)
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Описание
SiRA99DP 30V P-Channel MOSFET
Vishay Semiconductors SiRA99DP 30V P-Channel MOSFET is a TrenchFET ® Gen IV power MOSFET. The SiRA99DP MOSFET offers low on-resistance that minimizes voltage drop and reduces conduction loss. This SiRA99DP MOSFET operates at a temperature range of -55 C to 150 C. The power MOSFET is available in a single configuration PowerPAK ® SO-8 package. Typical applications include load switch, adapter and charger switch, battery protection, and motor drive control.
Vishay Semiconductors SiRA99DP 30V P-Channel MOSFET is a TrenchFET ® Gen IV power MOSFET. The SiRA99DP MOSFET offers low on-resistance that minimizes voltage drop and reduces conduction loss. This SiRA99DP MOSFET operates at a temperature range of -55 C to 150 C. The power MOSFET is available in a single configuration PowerPAK ® SO-8 package. Typical applications include load switch, adapter and charger switch, battery protection, and motor drive control.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 57 ns |
| Forward Transconductance - Min: | 114 S |
| Id - Continuous Drain Current: | 195 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerPAK-SO-8 |
| Pd - Power Dissipation: | 104 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 172.5 nC |
| Rds On - Drain-Source Resistance: | 1.7 mOhms |
| Rise Time: | 183 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerPAK |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 64 ns |
| Typical Turn-On Delay Time: | 69 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.51 |
Техническая документация
Datasheet
pdf, 188 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
