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см. техническую документацию
см. техническую документацию
480 руб.
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400 руб.
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Описание
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified and produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in various packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK® SO-8, PowerPAK 8x8L, PowerPAK SO-8L, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W, as well as several space-saving, small-outline options. A full range of polarity options, including N-channel and P-channel co-packages, is also available. Vishay / Siliconix SQ Automotive Power MOSFETs are offered in a wide range of polarity options, including N-channel and P-channel co-packages.
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified and produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in various packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK® SO-8, PowerPAK 8x8L, PowerPAK SO-8L, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W, as well as several space-saving, small-outline options. A full range of polarity options, including N-channel and P-channel co-packages, is also available. Vishay / Siliconix SQ Automotive Power MOSFETs are offered in a wide range of polarity options, including N-channel and P-channel co-packages.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns, 5 ns |
| Forward Transconductance - Min: | 27 S, 27 S |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | PowerPAK-SO-8-4 |
| Pd - Power Dissipation: | 48 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 30 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 21 mOhms, 21 mOhms |
| Rise Time: | 5 ns, 5 ns |
| Series: | SQ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 20 ns, 20 ns |
| Typical Turn-On Delay Time: | 10 ns, 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 0.5066 |
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
