SST4403HZGT116, Bipolar Transistors - BJT SST4403HZG is the high reliability Automotive transistor, suitable for audio frequency small signa

SST4403HZGT116, Bipolar Transistors - BJT SST4403HZG is the high reliability Automotive transistor, suitable for audio frequency small signa
Изображения служат только для ознакомления,
см. техническую документацию
50582 шт., срок 7-9 недель
110 руб.
от 10 шт.63 руб.
от 100 шт.27 руб.
от 1000 шт.19.14 руб.
Добавить в корзину 1 шт. на сумму 110 руб.
Номенклатурный номер: 8005266160
Артикул: SST4403HZGT116
Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Automotive Bipolar Transistors ROHM Semiconductor Automotive Bipolar Transistors are AEC-Q101 qualified devices. These automotive bipolar transistors are available in NPN and PNP configurations with an Emitter (E), Base (B), and Collector(C) as there terminals. The bipolar transistors offer collector-emitter voltage range between -30V to 65V and -600mA to 600mA collector current. These automotive bipolar transistors are available in SOT-23, TO-252, LPTL, and SOT-323 packages. The bipolar transistors are used in audio frequency small-signal amplifiers and low-frequency amplifiers.

Технические параметры

Brand: ROHM Semiconductor
Collector- Base Voltage VCBO: 40 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 750 mV
Configuration: Single
Continuous Collector Current: -600 mA
DC Collector/Base Gain hFE Min: 100
DC Current Gain hFE Max: 300
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 200 MHz
Manufacturer: ROHM Semiconductor
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: +150 C
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Packaging: Reel, Cut Tape
Part # Aliases: SST4403HZG
Pd - Power Dissipation: 350 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Qualification: AEC-Q101
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Collector Current (Ic) 600mA
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 40V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 750mV@500mA, 50mA
DC Current Gain (hFE@Ic,Vce) 100@150mA, 1V
Operating Temperature -
Power Dissipation (Pd) 200mW
Вес, г 0.03

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов

Сроки доставки

Выберите регион, чтобы увидеть способы получения товара.