STD5N95K3, Транзистор: N-MOSFET; SuperMESH3™; полевой; 950В; 3А; Idm: 16А; 90Вт

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4494 шт., срок 7 недель

450 руб.

от 10 шт. — 310 руб.

от 30 шт. — 270 руб.

от 100 шт. — 234.11 руб.

Добавить в корзину 1 шт. на сумму 450 руб.

Альтернативные предложения1

Номенклатурный номер: 8015743836

Артикул: STD5N95K3

950V 4A 3.5Ω@2A,10V 90W 5V@100uA null DPAK MOSFETs ROHS

Continuous Drain Current (Id)	4A
Drain Source On Resistance (RDS(on)@Vgs,Id)	3.5Ω@2A, 10V
Drain Source Voltage (Vdss)	950V
Gate Threshold Voltage (Vgs(th)@Id)	5V@100uA
Input Capacitance (Ciss@Vds)	460pF@25V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	90W
Total Gate Charge (Qg@Vgs)	19nC@10V
Type	null
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	2500
Fall Time:	18 ns
Id - Continuous Drain Current:	4 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	DPAK-3(TO-252-3)
Pd - Power Dissipation:	90 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19 nC
Rds On - Drain-Source Resistance:	3 Ohms
Rise Time:	7 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns
Vds - Drain-Source Breakdown Voltage:	950 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.48