ZVP2110A, Транзистор MOSFET P-CH 100В 0.23А [TO-92-3]

Фото 1/4 ZVP2110A, Транзистор MOSFET P-CH 100В 0.23А [TO-92-3]
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см. техническую документацию
55 руб.
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Номенклатурный номер: 9000300566
Артикул: ZVP2110A
Бренд: DIODES INC.

Описание

Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Технические параметры

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 4000
Fall Time: 15 ns
Forward Transconductance - Min: 125 mS
Id - Continuous Drain Current: 230 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-92-3
Packaging: Bulk
Pd - Power Dissipation: 700 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signal
Rds On - Drain-Source Resistance: 8 Ohms
Rise Time: 15 ns
Series: ZVP2110
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Type: FET
Typical Turn-Off Delay Time: 12 ns
Typical Turn-On Delay Time: 7 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Вес, г 0.3

Техническая документация

Datasheet
pdf, 1680 КБ
ZVP2110A
pdf, 70 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов