BCX5516TA, Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R
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15 руб.
Мин. кол-во для заказа 2000 шт.
Кратность заказа 1000 шт.
от 10000 шт. —
12 руб.
Добавить в корзину 2000 шт.
на сумму 30 000 руб.
Описание
Diodes, Transistors and Thyristors\Bipolar Transistors\GP BJT
Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R
Технические параметры
Automotive | No |
Configuration | Single Dual Collector |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Maximum Base Current (A) | 0.1 |
Maximum Collector Base Voltage (V) | 60 |
Maximum Collector Cut-Off Current (nA) | 100 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.5 50mA 500mA |
Maximum Collector-Emitter Voltage (V) | 60 |
Maximum DC Collector Current (A) | 1 |
Maximum Emitter Base Voltage (V) | 6 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2000 |
Minimum DC Current Gain | 25 5mA 2V|40 150mA 2V|25 500mA 2V|100 150mA 2V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 4 |
PPAP | No |
Product Category | Bipolar Power |
Standard Package Name | SOT |
Supplier Package | SOT-89 |
Supplier Temperature Grade | Automotive |
Tab | Tab |
Type | NPN |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 60 V |
Collector- Emitter Voltage VCEO Max: | 60 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Configuration: | Single |
DC Collector/Base Gain hFE Min: | 25 at 5 mA, 2 V |
DC Current Gain hFE Max: | 100 at 150 mA, 2 V |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Gain Bandwidth Product fT: | 150 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 1 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package/Case: | SOT-89-3 |
Pd - Power Dissipation: | 1 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | BCX55 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Maximum Collector Base Voltage | 60 V |
Maximum Collector Emitter Voltage | 60 V |
Maximum DC Collector Current | 1 A |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Frequency | 150 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1 W |
Mounting Type | Surface Mount |
Package Type | SOT-89 |
Transistor Configuration | Single |
Transistor Type | NPN |
Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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