IRFI9520GPBF, Trans MOSFET P-CH 100V 5.2A 3-Pin(3+Tab) TO-220FP

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230 руб.

Мин. кол-во для заказа 140 шт.

Добавить в корзину 140 шт. на сумму 32 200 руб.

Номенклатурный номер: 8001049293

Артикул: IRFI9520GPBF

Diodes, Transistors and Thyristors\FET Transistors\MOSFETs

Trans MOSFET P-CH 100V 5.2A 3-Pin(3+Tab) TO-220FP

Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	5.2
Maximum Drain Source Resistance (mOhm)	600 10V
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	37000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	TO-220
Supplier Package	TO-220FP
Tab	Tab
Typical Fall Time (ns)	25
Typical Gate Charge @ 10V (nC)	18(Max)
Typical Gate Charge @ Vgs (nC)	18(Max)10V
Typical Input Capacitance @ Vds (pF)	390 25V
Typical Rise Time (ns)	29
Typical Turn-Off Delay Time (ns)	21
Typical Turn-On Delay Time (ns)	9.6
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Id - Continuous Drain Current:	5.2 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	37 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	18 nC
Rds On - Drain-Source Resistance:	600 mOhms
Series:	IRFI
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	1