STD3NK90ZT4, Транзистор полевой N-канальный 900В 3А 90Вт
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496 шт. со склада г.Москва, срок 12 дней
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 900В 3А 90Вт
Технические параметры
Корпус | dpak | |
Channel Mode | Enhancement | |
Channel Type | N | |
Maximum Continuous Drain Current | 3 A | |
Maximum Drain Source Resistance | 4.8 Ω | |
Maximum Drain Source Voltage | 900 V | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Gate Threshold Voltage | 4.5V | |
Maximum Operating Temperature | +150 °C | |
Maximum Power Dissipation | 90 W | |
Minimum Gate Threshold Voltage | 3V | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Surface Mount | |
Number of Elements per Chip | 1 | |
Package Type | DPAK(TO-252) | |
Pin Count | 3 | |
Series | MDmesh, SuperMESH | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 22.7 nC @ 10 V | |
Width | 6.2mm | |
Brand | STMicroelectronics | |
Configuration | Single | |
Factory Pack Quantity | 2500 | |
Fall Time | 18 ns | |
Forward Transconductance - Min | 2.7 S | |
Height | 2.4 mm | |
Id - Continuous Drain Current | 3 A | |
Length | 6.6 mm | |
Manufacturer | STMicroelectronics | |
Mounting Style | SMD/SMT | |
Number of Channels | 1 Channel | |
Package / Case | TO-252-3 | |
Packaging | Reel | |
Pd - Power Dissipation | 90 W | |
Product Category | MOSFET | |
Qg - Gate Charge | 22.7 nC | |
Rds On - Drain-Source Resistance | 4.8 Ohms | |
Rise Time | 7 ns | |
RoHS | Details | |
Technology | Si | |
Transistor Polarity | N-Channel | |
Transistor Type | 1 N-Channel | |
Type | MOSFET | |
Typical Turn-Off Delay Time | 45 ns | |
Typical Turn-On Delay Time | 18 ns | |
Vds - Drain-Source Breakdown Voltage | 900 V | |
Vgs - Gate-Source Voltage | 30 V | |
Brand: | STMicroelectronics | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
Fall Time: | 18 ns | |
Forward Transconductance - Min: | 2.7 S | |
Id - Continuous Drain Current: | 3 A | |
Manufacturer: | STMicroelectronics | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | SMD/SMT | |
Number of Channels: | 1 Channel | |
Package / Case: | TO-252-3 | |
Pd - Power Dissipation: | 90 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 22.7 nC | |
Rds On - Drain-Source Resistance: | 4.8 Ohms | |
Rise Time: | 7 ns | |
Series: | STD3NK90ZT4 | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | SuperMESH | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Type: | MOSFET | |
Typical Turn-Off Delay Time: | 45 ns | |
Typical Turn-On Delay Time: | 18 ns | |
Vds - Drain-Source Breakdown Voltage: | 900 V | |
Vgs - Gate-Source Voltage: | -30 V, +30 V | |
Vgs th - Gate-Source Threshold Voltage: | 3 V | |
Вес, г | 0.6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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