SI7431DP-T1-E3, Trans MOSFET P-CH 200V 2.2A 8-Pin PowerPAK SO T/R

Изображения служат только для ознакомления,
см. техническую документацию

700 руб.

Кратность заказа 3000 шт.

Добавить в корзину 3000 шт. на сумму 2 100 000 руб.

Номенклатурный номер: 8001286683

Артикул: SI7431DP-T1-E3

Diodes, Transistors and Thyristors\FET Transistors\MOSFETs

Trans MOSFET P-CH 200V 2.2A 8-Pin PowerPAK SO T/R

Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	No Lead
Maximum Continuous Drain Current (A)	2.2
Maximum Drain Source Resistance (mOhm)	174@10V
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1900
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Supplier Package	PowerPAK SO
Typical Fall Time (ns)	66
Typical Gate Charge @ 10V (nC)	88
Typical Gate Charge @ Vgs (nC)	88@10V
Typical Rise Time (ns)	49
Typical Turn-Off Delay Time (ns)	110
Typical Turn-On Delay Time (ns)	23
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	3.8 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerPAK-SO-8
Part # Aliases:	SI7431DP-E3
Pd - Power Dissipation:	5.4 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	135 nC
Rds On - Drain-Source Resistance:	174 mOhms
Series:	SI7
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	1