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SI2367DS-T1-GE3, Trans MOSFET P-CH 20V 3.8A 3-Pin SOT-23 T/R

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см. техническую документацию

43 руб.

Мин. кол-во для заказа 720 шт.

Добавить в корзину 720 шт. на сумму 30 960 руб.

Альтернативные предложения1

Номенклатурный номер: 8001352049

Артикул: SI2367DS-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Diodes, Transistors and Thyristors\FET Transistors\MOSFETs

Описание Транзистор P-MOSFET, полевой, -20В, -3А, 1,1Вт, SOT23

Технические параметры

Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
ECCN (US)	EAR99
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	2.8
Maximum Drain Source Resistance (mOhm)	66@4.5V
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±8
Maximum Gate Threshold Voltage (V)	1
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	960
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Drain Source Resistance @ 25°C (mOhm)	55@4.5V\|71@2.5V\|100@1.8V
Typical Fall Time (ns)	10
Typical Gate Charge @ Vgs (nC)	15@8V\|9@4.5V
Typical Gate to Drain Charge (nC)	2.5
Typical Gate to Source Charge (nC)	1
Typical Input Capacitance @ Vds (pF)	561@10V
Typical Output Capacitance (pF)	112
Typical Reverse Recovery Charge (nC)	15
Typical Rise Time (ns)	20
Typical Turn-Off Delay Time (ns)	40
Typical Turn-On Delay Time (ns)	20
Maximum Continuous Drain Current	2.2 A
Maximum Drain Source Resistance	130 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.7 W
Minimum Gate Threshold Voltage	0.4V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOT-23
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	15 nC @ 8 V
Width	1.4mm
Вес, г	0.01