IRF740STRLPBF, Транзистор полевой N-канальный 400В 10А 135Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 400В 10А 135Вт
Технические параметры
| Корпус | D2Pak(TO-263) | |
| Brand | Vishay/Siliconix | |
| Factory Pack Quantity | 800 | |
| Manufacturer | Vishay | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-263-3 | |
| Packaging | Cut Tape or Reel | |
| Product Category | MOSFET | |
| Product Type | MOSFET | |
| Series | IRF | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 10 | |
| Maximum Drain Source Resistance (mOhm) | 550 10V | |
| Maximum Drain Source Voltage (V) | 400 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 3100 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Part Status | Active | |
| PCB changed | 2 | |
| Pin Count | 3 | |
| PPAP | No | |
| Standard Package Name | TO-263 | |
| Supplier Package | D2PAK | |
| Tab | Tab | |
| Typical Fall Time (ns) | 24 | |
| Typical Gate Charge @ 10V (nC) | 63(Max) | |
| Typical Gate Charge @ Vgs (nC) | 63(Max)10V | |
| Typical Input Capacitance @ Vds (pF) | 1400 25V | |
| Typical Rise Time (ns) | 27 | |
| Typical Turn-Off Delay Time (ns) | 50 | |
| Typical Turn-On Delay Time (ns) | 14 | |
| Brand: | Vishay Semiconductors | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 800 | |
| Id - Continuous Drain Current: | 10 A | |
| Manufacturer: | Vishay | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | D2PAK-3(TO-263-3) | |
| Pd - Power Dissipation: | 125 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 63 nC | |
| Rds On - Drain-Source Resistance: | 550 mOhms | |
| REACH - SVHC: | Details | |
| Series: | IRF | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 400 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | |
| Вес, г | 1.35 |
Техническая документация
Datasheet
pdf, 198 КБ
Datasheet IRF740STRLPBF
pdf, 175 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
