STL130N8F7

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8 шт. со склада г.Москва, срок 6-7 дней

640 руб.

от 2 шт. — 540 руб.

от 5 шт. — 463 руб.

Добавить в корзину 1 шт. на сумму 640 руб.

Альтернативные предложения1

Номенклатурный номер: 8001935095

Электроэлемент

Mosfet, N-Ch, 80V, 120A, 175Deg C, 135W Rohs Compliant: Yes |Stmicroelectronics STL130N8F7

Brand	STMicroelectronics
Configuration	Dual Dual Drain
Factory Pack Quantity	3000
Id - Continuous Drain Current	24 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	PowerFLAT-5x6-8
Packaging	Reel
Pd - Power Dissipation	5 W
Product Category	MOSFET
Qg - Gate Charge	110 nC
Rds On - Drain-Source Resistance	4.6 mOhms
RoHS	Details
Series	N-channel STripFET
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel
Vds - Drain-Source Breakdown Voltage	80 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	4 V
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	44 ns
Id - Continuous Drain Current:	120 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerFLAT-5x6-8
Pd - Power Dissipation:	135 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	96 nC
Rds On - Drain-Source Resistance:	3.6 mOhms
Rise Time:	51 ns
Series:	STL130N8F7
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	82 ns
Typical Turn-On Delay Time:	26 ns
Vds - Drain-Source Breakdown Voltage:	80 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Вес, г	0.4