STGW80H65DFB
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6 шт. со склада г.Москва, срок 9-10 дней
1 560 руб.
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Описание
Электроэлемент
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pin
Технические параметры
| Brand | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 120 A |
| Continuous Collector Current Ic Max | 80 A |
| Factory Pack Quantity | 600 |
| Gate-Emitter Leakage Current | 250 nA |
| Manufacturer | STMicroelectronics |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 469 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | 600-650V IGBTs |
| Technology | Si |
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 120 A |
| Continuous Collector Current Ic Max: | 80 A |
| Factory Pack Quantity: | 600 |
| Gate-Emitter Leakage Current: | 250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 469 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Case | TO247-3 |
| Collector current | 80A |
| Collector-emitter voltage | 650V |
| Features of semiconductor devices | integrated anti-parallel diode |
| Gate charge | 414nC |
| Gate-emitter voltage | ±20V |
| Kind of package | tube |
| Mounting | THT |
| Power dissipation | 470W |
| Pulsed collector current | 300A |
| Type of transistor | IGBT |
| Вес, г | 8.5 |
Техническая документация
Datasheet
pdf, 647 КБ
Datasheet STGWT80H65DFB
pdf, 663 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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