STF11N65M2

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1 шт. со склада г.Москва, срок 9-10 дней

780 руб.

Добавить в корзину 1 шт. на сумму 780 руб.

Альтернативные предложения3

Номенклатурный номер: 8001940783

Электроэлемент

650V 7A 670m-@10V,3.5A 25W 4V@250uA N Channel TO-220FP MOSFETs ROHS

Current - Continuous Drain (Id) @ 25В°C	7A(Tc)
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	410pF @ 100V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-220-3 Full Pack
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	25W(Tc)
Rds On (Max) @ Id, Vgs	670mOhm @ 3.5A, 10V
Series	MDmeshв(ў II Plus
Supplier Device Package	TO-220FP
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±25V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	15 ns
Id - Continuous Drain Current:	7 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	25 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	Power MOSFETs
Qg - Gate Charge:	12.5 nC
Rds On - Drain-Source Resistance:	670 mOhms
Rise Time:	7.5 ns
Series:	STF11N65M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh II Plus
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	9.5 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.33