STGW15H120DF2

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1 шт. со склада г.Москва, срок 9-10 дней

1 690 руб.

Добавить в корзину 1 шт. на сумму 1 690 руб.

Альтернативные предложения1

Номенклатурный номер: 8001940785

Электроэлемент

IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Brand	STMicroelectronics
Collector- Emitter Voltage VCEO Max	1200 V
Collector-Emitter Saturation Voltage	2.1 V
Configuration	Single
Continuous Collector Current at 25 C	30 A
Continuous Collector Current Ic Max	15 A
Factory Pack Quantity	600
Gate-Emitter Leakage Current	250 nA
Manufacturer	STMicroelectronics
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	259 W
Product Category	IGBT Transistors
RoHS	Details
Series	900-1300V IGBTs
Technology	Si
Unit Weight	1.340411 oz
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Configuration:	Single
Continuous Collector Current at 25 C:	30 A
Continuous Collector Current Ic Max:	15 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	259 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGW15H120DF2
Subcategory:	IGBTs
Technology:	Si
Вес, г	38