BDP953H6327XTSA1

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420 руб.

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Номенклатурный номер: 8001941078

Электроэлемент

Описание NPN 100В 3A 5Вт B 100-475 SOT223

Brand	Infineon Technologies
Collector- Base Voltage VCBO	120 V
Collector- Emitter Voltage VCEO Max	100 V
Collector-Emitter Saturation Voltage	500 mV
Configuration	Single
Continuous Collector Current	3 A
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	3000
Gain Bandwidth Product fT	100 MHz
Manufacturer	Infineon
Maximum DC Collector Current	5 A
Maximum Operating Temperature	+150 C
Mounting Style	SMD/SMT
Package / Case	SOT-223-4
Packaging	Reel
Part # Aliases	953 BDP H6327 SP000748526
Pd - Power Dissipation	5 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Technology	Si
Transistor Polarity	NPN
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Maximum Power Dissipation	5 W
Minimum DC Current Gain	100
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223(SC-73)
Pin Count	3+Tab
Transistor Configuration	Single
Transistor Type	NPN
Вес, г	0.85