BSC117N08NS5ATMA1
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600 руб.
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540 руб.
от 10 шт. —
479 руб.
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Описание
Электроэлемент
Описание Транзистор МОП n-канальный, полевой, 80В, 49А, 50Вт, PG-TDSON-8
Технические параметры
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 5000 |
Fall Time | 3 ns |
Forward Transconductance - Min | 19 S |
Height | 1.27 mm |
Id - Continuous Drain Current | 49 A |
Length | 5.9 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TDSON-8 |
Packaging | Cut Tape |
Part # Aliases | BSC117N08NS5 SP001295028 |
Pd - Power Dissipation | 50 W |
Product Category | MOSFET |
Qg - Gate Charge | 15 nC |
Qualification | AEC-Q100 |
Rds On - Drain-Source Resistance | 16.3 mOhms |
Rise Time | 4 ns |
RoHS | Details |
Series | OptiMOS 5 |
Technology | Si |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 16 ns |
Typical Turn-On Delay Time | 10 ns |
Unit Weight | 0.01787 oz |
Vds - Drain-Source Breakdown Voltage | 80 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.2 V |
Width | 5.15 mm |
Channel Type | N |
Maximum Continuous Drain Current | 49 A |
Maximum Drain Source Resistance | 0.0117 Ω |
Maximum Drain Source Voltage | 80 V |
Maximum Gate Threshold Voltage | 3.8V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SuperSO8 5x6 |
Pin Count | 8 |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Development Kit: | EVAL_1K4W_ZVS_FB_CFD7 |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 3 ns |
Forward Transconductance - Min: | 19 S |
Id - Continuous Drain Current: | 49 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TDSON-8 |
Part # Aliases: | BSC117N08NS5 SP001295028 |
Pd - Power Dissipation: | 50 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 15 nC |
Rds On - Drain-Source Resistance: | 11.7 mOhms |
Rise Time: | 4 ns |
Series: | OptiMOS 5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | OptiMOS |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 16 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Вес, г | 0.209 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов