IPW60R099C7XKSA1

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2 060 руб.

от 2 шт. — 1 890 руб.

от 5 шт. — 1 790 руб.

от 6 шт. — 1 728.75 руб.

Добавить в корзину 1 шт. на сумму 2 060 руб.

Номенклатурный номер: 8001942528

Электроэлемент

Описание Транзистор N-МОП, полевой, 600В, 22А, 110Вт, PG-TO247 Характеристики

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Maximum Continuous Drain Current - (A)	22
Maximum Drain Source Resistance - (mOhm)	99@10V
Maximum Drain Source Voltage - (V)	600
Maximum Gate Source Voltage - (V)	20
Maximum Gate Threshold Voltage - (V)	4
Maximum Power Dissipation - (mW)	110000
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tube
Pin Count	3
Standard Package Name	TO-247
Supplier Package	TO-247
Typical Gate Charge @ 10V - (nC)	42
Typical Gate Charge @ Vgs - (nC)	42@10V
Typical Input Capacitance @ Vds - (pF)	1819@400V
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	240
Fall Time:	4.5 ns
Id - Continuous Drain Current:	22 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-247-3
Packaging:	Tube
Part # Aliases:	IPW60R099C7 SP001298004
Pd - Power Dissipation:	110 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	42 nC
Rds On - Drain-Source Resistance:	85 mOhms
Rise Time:	8 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	11.8 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Maximum Continuous Drain Current	22 A
Maximum Drain Source Voltage	650 V
Mounting Type	SMD
Package Type	PG-TO 247
Вес, г	38