STL60P4LLF6
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3 шт. со склада г.Москва, срок 8-9 дней
550 руб.
от 2 шт. —
450 руб.
Добавить в корзину 1 шт.
на сумму 550 руб.
Альтернативные предложения3
Описание
Электроэлемент
MOSFET, P-CH, -40V, -60A, POWERFLAT; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | ?20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 175 ?C |
| Package | 8Power Flat |
| Packaging | Tape & Reel |
| Rad Hard | No |
| RDS-on | 0.014@10V Ohm |
| Typical Fall Time | 20 ns |
| Typical Rise Time | 60.6 ns |
| Typical Turn-Off Delay Time | 170 ns |
| Typical Turn-On Delay Time | 49.4 ns |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 20 ns |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerFLAT-5x6-8 |
| Pd - Power Dissipation: | 100 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Rds On - Drain-Source Resistance: | 11.5 mOhms |
| Rise Time: | 60.6 ns |
| Series: | STL60P4LLF6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 170 ns |
| Typical Turn-On Delay Time: | 49.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| Category | Power MOSFET |
| Life Cycle | Active |
| Maximum Continuous Drain Current - (A) | 60 |
| Maximum Drain Source Resistance - (mOhm) | 19@4.5V |
| Maximum Drain Source Voltage - (V) | 40 |
| Maximum Gate Source Voltage - (V) | ?20 |
| Maximum Gate Threshold Voltage - (V) | 1(Min) |
| Maximum Operating Temperature - (?C) | 175 |
| Maximum Power Dissipation - (mW) | 100000 |
| Military Qualified | No |
| Minimum Operating Temperature - (?C) | -55 |
| Number of Elements per Chip | 1 |
| Package Family Name | Power Flat |
| Pin Count | 8 |
| Standard Package Name | Power Flat |
| Supplier Package | Power Flat EP |
| Technology | STripFET F6 |
| Typical Gate Charge @ Vgs - (nC) | 34@4.5V |
| Typical Input Capacitance @ Vds - (pF) | 3525@25V |
| Forward Diode Voltage | 1.1V |
| Maximum Drain Source Resistance | 19 mΩ |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 100 W |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Surface Mount |
| Package Type | PowerFLAT 5x6 |
| Series | STripFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 34 nC @ 4.5 V |
| Width | 5.4mm |
| Вес, г | 0.08 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 979 КБ
Datasheet
pdf, 991 КБ
Datasheet STL60P4LLF6
pdf, 881 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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