STD35P6LLF6
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1 шт. со склада г.Москва, срок 6-7 дней
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Описание
Электроэлемент
MOSFET, P-CH, -60V, -35A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 175 °C |
| RDS-on | 0.028@10V Ohm |
| Typical Fall Time | 21 ns |
| Typical Rise Time | 39 ns |
| Typical Turn-Off Delay Time | 171 ns |
| Typical Turn-On Delay Time | 51.4 ns |
| Case | DPAK |
| Drain current | -25A |
| Drain-source voltage | -60V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | STMicroelectronics |
| On-state resistance | 36mΩ |
| Polarisation | unipolar |
| Power dissipation | 70W |
| Type of transistor | P-MOSFET |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 21 ns |
| Id - Continuous Drain Current: | 35 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 70 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 30 nC |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Rise Time: | 39 ns |
| Series: | STD35P6LLF6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 171 ns |
| Typical Turn-On Delay Time: | 51.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 2.3 |
Техническая документация
Datasheet
pdf, 603 КБ
Datasheet STD35P6LLF6
pdf, 748 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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