STD7N52K3

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см. техническую документацию

3 шт. со склада г.Москва, срок 6-7 дней

620 руб.

от 2 шт. — 510 руб.

Добавить в корзину 1 шт. на сумму 620 руб.

Альтернативные предложения1

Номенклатурный номер: 8001981454

Электроэлемент

N-channel 525 V, 0.72 Ohm, 6 A, DPAK SuperMESH3(TM) Power MOSFET

Brand	STMicroelectronics
Factory Pack Quantity	2500
Fall Time	19 ns
Id - Continuous Drain Current	6 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Reel
Pd - Power Dissipation	90 W
Product Category	MOSFET
Qg - Gate Charge	33 nC
Rds On - Drain-Source Resistance	850 mOhms
Rise Time	11 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	36 ns
Typical Turn-On Delay Time	13 ns
Vds - Drain-Source Breakdown Voltage	525 V
Vgs - Gate-Source Voltage	30 V
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	19 ns
Id - Continuous Drain Current:	6 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	90 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	33 nC
Rds On - Drain-Source Resistance:	850 mOhms
Rise Time:	11 ns
Series:	STD7N52K3
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	525 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.6