BSO150N03MDG
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
420 руб.
от 2 шт. —
320 руб.
Добавить в корзину 1 шт.
на сумму 420 руб.
Описание
Электроэлемент
BSO150N03 - 12V-300V N-Channel Power MOSFET
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Factory Pack Quantity | 2500 |
| Fall Time | 4.2 ns, 4.2 ns |
| Forward Transconductance - Min | 12 S, 12 S |
| Height | 1.75 mm |
| Id - Continuous Drain Current | 9.3 A, 9.3 A |
| Length | 4.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SO-8 |
| Packaging | Reel |
| Part # Aliases | BSO150N03MDGXT BSO150N03MDGXUMA1 SP000447476 |
| Pd - Power Dissipation | 2 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 17 nC, 17 nC |
| Rds On - Drain-Source Resistance | 12.5 mOhms, 12.5 mOhms |
| Rise Time | 3.8 ns, 3.8 ns |
| RoHS | Details |
| Series | OptiMOS 3M |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 8.7 ns, 8.7 ns |
| Typical Turn-On Delay Time | 7.3 ns, 7.3 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V, 30 V |
| Vgs - Gate-Source Voltage | 20 V, 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 1 V |
| Width | 3.9 mm |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 8 |
| Maximum Drain Source Resistance (mOhm) | 15 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±16 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | OptiMOS |
| Standard Package Name | SOP |
| Supplier Package | DSO |
| Typical Fall Time (ns) | 4.2 |
| Typical Gate Charge @ 10V (nC) | 12.6 |
| Typical Gate Charge @ Vgs (nC) | 6.1 4.5V|12.6 10V |
| Typical Input Capacitance @ Vds (pF) | 970 15V |
| Typical Rise Time (ns) | 3.8 |
| Typical Turn-Off Delay Time (ns) | 8.7 |
| Typical Turn-On Delay Time (ns) | 7.3 |
| Вес, г | 0.5 |
Техническая документация
Datasheet
pdf, 678 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
