STB21N65M5

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2 шт. со склада г.Москва, срок 6-7 дней

2 240 руб.

от 2 шт. — 2 120 руб.

Добавить в корзину 1 шт. на сумму 2 240 руб.

Альтернативные предложения1

Номенклатурный номер: 8001991085

Электроэлемент

N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in D2PAK package

Brand	STMicroelectronics
Factory Pack Quantity	1000
Fall Time	12 ns
Id - Continuous Drain Current	17 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Packaging	Reel
Pd - Power Dissipation	125 W
Product Category	MOSFET
Qg - Gate Charge	50 nC
Rds On - Drain-Source Resistance	190 mOhms
Rise Time	10 ns
RoHS	Details
Series	MDmesh M5
Technology	Si
Transistor Polarity	N-Channel
Type	Power Mosfet
Unit Weight	0.139332 oz
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	4 V
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	12 ns
Id - Continuous Drain Current:	17 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Pd - Power Dissipation:	125 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	50 nC
Rds On - Drain-Source Resistance:	190 mOhms
Rise Time:	10 ns
Series:	Mdmesh M5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Type:	Power MOSFET
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	1.255