STD11NM50N
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см. техническую документацию
см. техническую документацию
39 шт. со склада г.Москва, срок 9-10 дней
600 руб.
от 2 шт. —
490 руб.
от 5 шт. —
420 руб.
от 10 шт. —
387.50 руб.
Добавить в корзину 1 шт.
на сумму 600 руб.
Альтернативные предложения2
Описание
Электроэлемент
:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD11NM50N
Технические параметры
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 10 ns |
| Id - Continuous Drain Current | 8.5 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 70 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 19 nC |
| Rds On - Drain-Source Resistance | 470 mOhms |
| Rise Time | 10 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Power Mosfet |
| Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time | 8 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | +/-25 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Lead Shape | Gull-wing |
| Tab | Tab |
| Package Height | 2.4(Max) |
| Package Width | 6.2(Max) |
| Package Length | 6.6(Max) |
| Mounting | Surface Mount |
| PCB changed | 2 |
| Process Technology | MDmesh II |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Continuous Drain Current (A) | 8.5 |
| Maximum Drain Source Resistance (mOhm) | 470@10V |
| Typical Gate Charge @ Vgs (nC) | 19@10V |
| Typical Gate Charge @ 10V (nC) | 19 |
| Typical Input Capacitance @ Vds (pF) | 547@50V |
| Maximum Power Dissipation (mW) | 70000 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 33 |
| Typical Turn-On Delay Time (ns) | 8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Supplier Package | DPAK |
| Standard Package Name | TO-252 |
| Pin Count | 3 |
| Military | No |
| кол-во в упаковке | 2500 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 10 ns |
| Id - Continuous Drain Current: | 8.5 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 70 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Rds On - Drain-Source Resistance: | 470 mOhms |
| Rise Time: | 10 ns |
| Series: | STD11NM50N |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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