STP21NM60ND

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2 шт. со склада г.Москва, срок 6-7 дней

600 руб.

от 2 шт. — 490 руб.

Добавить в корзину 1 шт. на сумму 600 руб.

Альтернативные предложения1

Номенклатурный номер: 8001992337

Электроэлемент

N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220 package

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	17
Maximum Drain Source Resistance - (mOhm)	220@10V
Maximum Drain Source Voltage - (V)	600
Maximum Gate Source Voltage - (V)	??25
Maximum Gate Threshold Voltage - (V)	5
Maximum Power Dissipation - (mW)	140000
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tube
Pin Count	3
Process Technology	FDmesh II
Standard Package Name	TO-220
Supplier Package	TO-220
Typical Gate Charge @ 10V - (nC)	60
Typical Gate Charge @ Vgs - (nC)	60@10V
Typical Input Capacitance @ Vds - (pF)	1800@50V
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	17
Maximum Drain Source Resistance (mOhm)	220 10V
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±25
Maximum Gate Threshold Voltage (V)	5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	140000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Part Status	Obsolete
PCB changed	3
PPAP	No
Product Category	Power MOSFET
Tab	Tab
Typical Fall Time (ns)	48
Typical Gate Charge @ 10V (nC)	60
Typical Gate Charge @ Vgs (nC)	60 10V
Typical Input Capacitance @ Vds (pF)	1800 50V
Typical Rise Time (ns)	16
Typical Turn-Off Delay Time (ns)	70
Typical Turn-On Delay Time (ns)	18
Вес, г	3.5