STB80N20M5
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см. техническую документацию
3 шт. со склада г.Москва, срок 6-7 дней
2 150 руб.
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1 990 руб.
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Описание
Электроэлемент
MOSFET, N-CH, 200V, 61A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 61 |
| Maximum Drain Source Resistance - (mOhm) | 23@10V |
| Maximum Drain Source Voltage - (V) | 200 |
| Maximum Gate Source Voltage - (V) | ??25 |
| Maximum Power Dissipation - (mW) | 190000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | MDmesh |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Typical Gate Charge @ 10V - (nC) | 104 |
| Typical Gate Charge @ Vgs - (nC) | 104@10V |
| Typical Input Capacitance @ Vds - (pF) | 4329@50V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 176 ns |
| Forward Transconductance - Min: | 1.6 S |
| Id - Continuous Drain Current: | 61 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 190 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 104 nC |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Rise Time: | 31 ns |
| Series: | STB80N20M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | N-Channel MDmesh V Power MOSFET |
| Typical Turn-Off Delay Time: | 131 ns |
| Typical Turn-On Delay Time: | 66 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
Техническая документация
Datasheet
pdf, 880 КБ
Datasheet STB80N20M5
pdf, 929 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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