BSC340N08NS3G
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
330 руб.
от 2 шт. —
240 руб.
Добавить в корзину 1 шт.
на сумму 330 руб.
Описание
Электроэлемент
N-Channel MOSFET, 23 A, 80 V, 8-Pin TDSON Infineon BSC340N08NS3GATMA1
Технические параметры
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | 1 N-Channel |
Factory Pack Quantity | 5000 |
Fall Time | 2 ns |
Forward Transconductance - Min | 8 S |
Height | 1.27 mm |
Id - Continuous Drain Current | 23 A |
Length | 5.9 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TDSON-8 |
Packaging | Reel |
Part # Aliases | BSC340N08NS3GATMA1 BSC340N08NS3GXT SP000447534 |
Pd - Power Dissipation | 32 W |
Product Category | MOSFET |
Qg - Gate Charge | 9.1 nC |
Rds On - Drain-Source Resistance | 27.5 mOhms |
Rise Time | 3 ns |
RoHS | Details |
Series | OptiMOS 3 |
Technology | Si |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 11 ns |
Typical Turn-On Delay Time | 8 ns |
Vds - Drain-Source Breakdown Voltage | 80 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Width | 5.15 mm |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 2 ns |
Forward Transconductance - Min: | 8 S |
Id - Continuous Drain Current: | 23 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TDSON-8 |
Part # Aliases: | SP000447534 BSC34N8NS3GXT BSC340N08NS3GATMA1 |
Pd - Power Dissipation: | 32 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 9.1 nC |
Rds On - Drain-Source Resistance: | 27.5 mOhms |
Rise Time: | 3 ns |
Series: | OptiMOS 3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | OptiMOS |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 11 ns |
Typical Turn-On Delay Time: | 8 ns |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Вес, г | 0.1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов