IPP60R190C6
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Описание
Электроэлемент
N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 Infineon IPP60R190C6XKSA1
Технические параметры
| Brand | Infineon Technologies |
| Configuration | Single |
| Factory Pack Quantity | 500 |
| Fall Time | 9 ns |
| Height | 15.65 mm |
| Id - Continuous Drain Current | 20.2 A |
| Length | 10 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part # Aliases | IPP60R190C6XK IPP60R190C6XKSA1 SP000621158 |
| Pd - Power Dissipation | 34 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 63 nC |
| Rds On - Drain-Source Resistance | 190 mOhms |
| Rise Time | 11 ns |
| RoHS | Details |
| Series | CoolMOS C6 |
| Technology | Si |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 110 ns |
| Typical Turn-On Delay Time | 15 ns |
| Unit Weight | 0.211644 oz |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 4.4 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 9 ns |
| Id - Continuous Drain Current: | 20.2 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | SP000621158 IPP6R19C6XK IPP60R190C6XKSA1 |
| Pd - Power Dissipation: | 151 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 63 nC |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Rise Time: | 11 ns |
| Series: | CoolMOS C6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | CoolMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 110 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 2.03 |
Техническая документация
Datasheet
pdf, 1231 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
