2N7002W
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см. техническую документацию
93 руб.
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7.63 руб.
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Описание
Электроэлемент
MOSFET, N CHANNEL, 60 V, 800mA, SOT-323, Transistor Polarity:N Channel, Continuous Drain Current Id:800mA, Drain Source Voltage Vds:60V, On Resistance Rds(on):13.5ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Product Category | Small Signal |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 0.115 |
| Maximum Drain Source Resistance (mOhm) | 7500@5V |
| Typical Input Capacitance @ Vds (pF) | 22@25V |
| Maximum Power Dissipation (mW) | 200 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Typical Turn-On Delay Time (ns) | 7 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | SOT |
| Pin Count | 3 |
| Supplier Package | SOT-323 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 0.95 |
| Package Length | 2.15 |
| Package Width | 1.3 |
| PCB changed | 3 |
| Lead Shape | Gull-wing |
| Continuous Drain Current (Id) @ 25В°C | 115mA |
| Power Dissipation-Max (Ta=25В°C) | 200mW |
| Rds On - Drain-Source Resistance | 7.5О© @ 50mA,5V |
| Vds - Drain-Source Breakdown Voltage | 60V |
| Vgs - Gate-Source Voltage | 2V @ 250uA |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 80 mS |
| Id - Continuous Drain Current: | 115 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-323-3 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 13.5 Ohms |
| Series: | 2N7002W |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Enhancement Mode Field Effect Transistor |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Continuous Drain Current | 115 mA |
| Maximum Drain Source Resistance | 13.5 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 200 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-323 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 1.35mm |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 311 КБ
Datasheet
pdf, 120 КБ
Datasheet 2N7002W-7-F
pdf, 304 КБ
Datasheet 2N7002W-7-F
pdf, 198 КБ
Документация
pdf, 198 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
