STD16NF06LT4
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см. техническую документацию
см. техническую документацию
3 шт. со склада г.Москва, срок 9-10 дней
410 руб.
от 2 шт. —
320 руб.
Добавить в корзину 1 шт.
на сумму 410 руб.
Альтернативные предложения2
Описание
Электроэлемент
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 12 S |
| Id - Continuous Drain Current: | 24 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 40 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 7.5 nC |
| Rds On - Drain-Source Resistance: | 70 mOhms |
| Rise Time: | 30 ns |
| Series: | STD16NF06L |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 24 |
| Maximum Drain Source Resistance (mOhm) | 70@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±18 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 40000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Unconfirmed |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | STripFET II |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 6 |
| Typical Gate Charge @ Vgs (nC) | 7.5@5V |
| Typical Input Capacitance @ Vds (pF) | 370@25V |
| Typical Rise Time (ns) | 30 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Continuous Drain Current | 24 A |
| Maximum Drain Source Resistance | 85 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -18 V, +18 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 40 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | DPAK(TO-252) |
| Series | STripFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 7.5 nC @ 5 V |
| Width | 6.2mm |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 673 КБ
Datasheet
pdf, 329 КБ
Datasheet
pdf, 347 КБ
Datasheet STD16NF06LT4
pdf, 356 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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