STGD3NB60SDT4
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см. техническую документацию
см. техническую документацию
17 шт. со склада г.Москва, срок 9-10 дней
620 руб.
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510 руб.
от 5 шт. —
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от 10 шт. —
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Альтернативные предложения2
Описание
Электроэлемент
Описание Транзистор БТИЗ, 600В 6A 48Вт TO252 Характеристики | Категория | Транзистор |
| Тип | БТИЗ |
| Вид | IGBT |
Технические параметры
| Brand | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Continuous Collector Current | 3 A |
| Continuous Collector Current at 25 C | 6 A |
| Continuous Collector Current Ic Max | 6 A |
| Factory Pack Quantity | 2500 |
| Gate-Emitter Leakage Current | +/-100 nA |
| Height | 2.4 mm |
| Length | 6.6 mm |
| Manufacturer | STMicroelectronics |
| Maximum Gate Emitter Voltage | +/-20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 48 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | STGD3NB60SD |
| Unit Weight | 0.139332 oz |
| Width | 6.2 mm |
| Base Product Number | STGD3 -> |
| Current - Collector (Ic) (Max) | 6A |
| Current - Collector Pulsed (Icm) | 25A |
| ECCN | EAR99 |
| Gate Charge | 18nC |
| HTSUS | 8541.29.0095 |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175В°C (TJ) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Power - Max | 48W |
| REACH Status | REACH Unaffected |
| Reverse Recovery Time (trr) | 1.7Вµs |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | DPAK |
| Switching Energy | 1.15mJ (off) |
| Td (on/off) @ 25В°C | 125Вµs/- |
| Test Condition | 480V, 3A, 1kOhm, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 6 A |
| Continuous Collector Current Ic Max: | 6 A |
| Continuous Collector Current: | 3 A |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gate-Emitter Leakage Current: | +/-100 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | TO-252-3 |
| Pd - Power Dissipation: | 48 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Qualification: | AEC-Q101 |
| REACH - SVHC: | Details |
| Series: | STGD3NB60SD |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 0.6 |
Техническая документация
Datasheet
pdf, 308 КБ
Datasheet STGD3NB60SDT4
pdf, 307 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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