STN1HNK60
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63 шт. со склада г.Москва, срок 8-9 дней
140 руб.
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 600В, 0,4А, 3,3Вт, SOT223 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single Dual Drain |
Factory Pack Quantity | 4000 |
Fall Time | 25 ns |
Height | 1.8 mm |
Id - Continuous Drain Current | 400 mA |
Length | 6.5 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-223-3 |
Packaging | Reel |
Pd - Power Dissipation | 3.3 W |
Product Category | MOSFET |
Qg - Gate Charge | 7 nC |
Rds On - Drain-Source Resistance | 8.5 Ohms |
Rise Time | 5 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 6.5 ns |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 3.5 mm |
Base Product Number | STN1HNK60 -> |
Current - Continuous Drain (Id) @ 25В°C | 400mA (Tc) |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Power Dissipation (Max) | 3.3W (Tc) |
Rds On (Max) @ Id, Vgs | 8.5Ohm @ 500mA, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | SOT-223 |
Vgs (Max) | В±30V |
Vgs(th) (Max) @ Id | 3.7V @ 250ВµA |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Process Technology | SuperMESH |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Continuous Drain Current (A) | 0.4 |
Maximum Drain Source Resistance (mOhm) | 8500@10V |
Typical Gate Charge @ Vgs (nC) | 7@10V |
Typical Gate Charge @ 10V (nC) | 7 |
Typical Input Capacitance @ Vds (pF) | 156@25V |
Maximum Power Dissipation (mW) | 3300 |
Typical Fall Time (ns) | 25 |
Typical Rise Time (ns) | 5 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Turn-On Delay Time (ns) | 6.5 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Automotive | No |
Standard Package Name | SOT |
Pin Count | 4 |
Supplier Package | SOT-223 |
Military | No |
Mounting | Surface Mount |
Package Height | 1.8(Max) |
Package Length | 6.5 |
Package Width | 3.5 |
PCB changed | 3 |
Tab | Tab |
Lead Shape | Gull-wing |
Drain Source On State Resistance | 8Ом |
Power Dissipation | 3.3Вт |
Количество Выводов | 3вывод(-ов) |
Максимальная Рабочая Температура | 150 C |
Монтаж транзистора | Surface Mount |
Напряжение Измерения Rds(on) | 10В |
Напряжение Истока-стока Vds | 600В |
Непрерывный Ток Стока | 500мА |
Полярность Транзистора | N Канал |
Пороговое Напряжение Vgs | 3В |
Рассеиваемая Мощность | 3.3Вт |
Сопротивление во Включенном Состоянии Rds(on) | 8Ом |
Стиль Корпуса Транзистора | SOT-223 |
Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 4000 |
Fall Time: | 25 ns |
Id - Continuous Drain Current: | 400 mA |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-223-4 |
Pd - Power Dissipation: | 3.3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7 nC |
Rds On - Drain-Source Resistance: | 8.5 Ohms |
Rise Time: | 5 ns |
Series: | STN1HNK60 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperMESH |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 6.5 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 2.25 V |
Maximum Continuous Drain Current | 400 mA |
Maximum Drain Source Resistance | 8.5 Ω |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 3.7V |
Maximum Power Dissipation | 3.3 W |
Minimum Gate Threshold Voltage | 2.25V |
Package Type | SOT-223 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 7 nC @ 10 V |
Вес, г | 0.85 |
Техническая документация
Datasheet
pdf, 427 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 455 КБ
Datasheet STN1HNK60
pdf, 467 КБ
Datasheet STN1HNK60
pdf, 466 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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