STP36NF06L
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см. техническую документацию
см. техническую документацию
8 шт. со склада г.Москва, срок 6-7 дней
470 руб.
от 2 шт. —
360 руб.
от 5 шт. —
288 руб.
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Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 60В 30A 70Вт 0,048Ом TO220 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 13 ns |
| Forward Transconductance - Min | 15 S |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 30 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 70 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 32 mOhms |
| Rise Time | 80 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 18 V |
| Width | 4.6 mm |
| кол-во в упаковке | 50 |
| Automotive | Yes |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Diode Forward Voltage (V) | 1.5 |
| Maximum Drain Source Resistance (MOhm) | 40@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±18 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Positive Gate Source Voltage (V) | 18 |
| Maximum Power Dissipation (mW) | 70000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 120 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | Unknown |
| Process Technology | STripFET II |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Automotive |
| Tab | Tab |
| Typical Fall Time (ns) | 13 |
| Typical Gate Charge @ Vgs (nC) | 13@5V |
| Typical Gate Plateau Voltage (V) | 4.2 |
| Typical Gate to Drain Charge (nC) | 7.8 |
| Typical Gate to Source Charge (nC) | 4.2 |
| Typical Input Capacitance @ Vds (pF) | 660@25V |
| Typical Output Capacitance (pF) | 170 |
| Typical Reverse Recovery Charge (nC) | 107 |
| Typical Reverse Recovery Time (ns) | 55 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 70@25V |
| Typical Rise Time (ns) | 80 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Resistance | 40 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -18 V, +18 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 70 W |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 13 nC @ 5 V |
| Вес, г | 2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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