STGD6NC60HDT4

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2 шт. со склада г.Москва, срок 9-10 дней

460 руб.

от 2 шт. — 360 руб.

Добавить в корзину 1 шт. на сумму 460 руб.

Альтернативные предложения4

Номенклатурный номер: 8002007451

Электроэлемент

INSULATED GATE BIPOLAR TRANSISTOR, 15A I(C), 600V V(BR)CES, N-CHANNEL, TO-252AA

Brand	STMicroelectronics
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.9 V
Configuration	Single
Continuous Collector Current	6 A
Continuous Collector Current Ic Max	15 A
Factory Pack Quantity	2500
Gate-Emitter Leakage Current	100 nA
Height	2.4 mm
Length	6.6 mm
Manufacturer	STMicroelectronics
Maximum Gate Emitter Voltage	+/-20 V
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	DPAK-3
Packaging	Reel
Pd - Power Dissipation	50 W
Product Category	IGBT Transistors
RoHS	Details
Series	STGD6NC60HD
Technology	Si
Width	6.2 mm
Automotive	No
Channel Type	N
ECCN (US)	EAR99
Lead Shape	Gull-wing
Maximum Collector-Emitter Voltage (V)	600
Maximum Continuous Collector Current (A)	15
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	56
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Part Status	Active
PCB changed	2
Pin Count	3
PPAP	No
Standard Package Name	TO-252
Supplier Package	DPAK
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Collector Emitter Saturation Voltage (V)	1.9
Вес, г	0.6