STD3NK90ZT4
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1 шт. со склада г.Москва, срок 6-7 дней
320 руб.
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Описание
Электроэлемент
Описание Транзистор N-MOSFET, полевой, 900В, 3А, 12Вт, DPAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 18 ns |
Forward Transconductance - Min | 2.7 S |
Height | 2.4 mm |
Id - Continuous Drain Current | 3 A |
Length | 6.6 mm |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252-3 |
Packaging | Reel |
Pd - Power Dissipation | 90 W |
Product Category | MOSFET |
Qg - Gate Charge | 22.7 nC |
Rds On - Drain-Source Resistance | 4.8 Ohms |
Rise Time | 7 ns |
RoHS | Details |
Series | STD3NK90Z |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 18 ns |
Vds - Drain-Source Breakdown Voltage | 900 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 6.2 mm |
Channel Type | N |
Maximum Continuous Drain Current | 3 A |
Maximum Drain Source Resistance | 4.8 Ω |
Maximum Drain Source Voltage | 900 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 4.5V |
Maximum Power Dissipation | 90 W |
Minimum Gate Threshold Voltage | 3V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | DPAK(TO-252) |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 22.7 nC @ 10 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 18 ns |
Forward Transconductance - Min: | 2.7 S |
Id - Continuous Drain Current: | 3 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 90 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 22.7 nC |
Rds On - Drain-Source Resistance: | 4.8 Ohms |
Rise Time: | 7 ns |
Series: | STD3NK90ZT4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperMESH |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 45 ns |
Typical Turn-On Delay Time: | 18 ns |
Vds - Drain-Source Breakdown Voltage: | 900 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 0.6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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