STB270N4F3
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1 шт. со склада г.Москва, срок 6-7 дней
1 380 руб.
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Описание
Электроэлемент
N-Channel 40 V 2 m? Surface Mount MDmesh II Power MosFet - D2PAK
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 45 ns |
| Height | 4.6 mm |
| Id - Continuous Drain Current | 160 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 330 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 2 mOhms |
| Rise Time | 180 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 110 ns |
| Typical Turn-On Delay Time | 22 ns |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 9.35 mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 45 ns |
| Id - Continuous Drain Current: | 160 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 330 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 150 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 2 mOhms |
| Rise Time: | 180 ns |
| Series: | STB270N4F3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 110 ns |
| Typical Turn-On Delay Time: | 22 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 656 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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