STP18N55M5
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см. техническую документацию
7 шт. со склада г.Москва, срок 6-7 дней
1 000 руб.
от 2 шт. —
880 руб.
от 5 шт. —
788 руб.
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, MDmesh™ V, полевой, 550В, 10А, 110Вт, TO220-3 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 13 ns |
| Id - Continuous Drain Current | 13 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 90 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 31 nC |
| Rds On - Drain-Source Resistance | 240 mOhms |
| Rise Time | 9.5 ns |
| RoHS | Details |
| Series | MDmesh M5 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 29 ns |
| Unit Weight | 0.01164 oz |
| Vds - Drain-Source Breakdown Voltage | 550 V |
| Vgs - Gate-Source Voltage | 25 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 13 ns |
| Id - Continuous Drain Current: | 13 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 90 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 31 nC |
| Rds On - Drain-Source Resistance: | 240 mOhms |
| Rise Time: | 9.5 ns |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 29 ns |
| Vds - Drain-Source Breakdown Voltage: | 550 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 13 A |
| Maximum Drain Source Resistance | 240 mΩ |
| Maximum Drain Source Voltage | 550 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 90 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Width | 4.6mm |
| Вес, г | 3.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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