BSC059N04LSGATMA1
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Описание
Электроэлемент
MOSFET, N CHANNEL, 40V, 73A, PG-TDSON-8, Transistor Polarity:N Channel, Continuous Drain Current Id:73A, Drain Source Voltage Vds:40V, On Resistance Rds(on):4.9mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 3.8 ns |
| Forward Transconductance - Min | 48 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 73 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC059N04LS BSC059N04LSGXT G SP000391499 |
| Pd - Power Dissipation | 50 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 40 nC |
| Rds On - Drain-Source Resistance | 4.9 mOhms |
| Rise Time | 3.4 ns |
| RoHS | Details |
| Series | BSC059N04 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 23 ns |
| Typical Turn-On Delay Time | 5.6 ns |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 5.15 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 73 A |
| Maximum Drain Source Resistance | 0.0059 Ω |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TDSON |
| Pin Count | 8 |
| Transistor Material | Si |
| Вес, г | 0.149 |
Техническая документация
Datasheet BSC059N04LSGATMA1
pdf, 519 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
