BSC084P03NS3GATMA1
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Описание
Электроэлемент
MOSFET, P-CH, -30V, -78.6A, TDSON, Transistor Polarity:P Channel, Continuous Drain Current Id:-78.6A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.0061ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, Power , RoHS Compliant: Yes
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 P-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 33 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | -78.6 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC084P03NS3 BSC084P03NS3GXT G SP000473020 |
| Pd - Power Dissipation | 69 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 58 nC |
| Rds On - Drain-Source Resistance | 6.1 mOhms |
| Rise Time | 134 ns |
| RoHS | Details |
| Series | BSC084P03 |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time | 16 ns |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | +/-25 V |
| Vgs th - Gate-Source Threshold Voltage | -3.1 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 33 S |
| Id - Continuous Drain Current: | 78.6 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC084P03NS3 G SP000473020 |
| Pd - Power Dissipation: | 69 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 57.7 nC |
| Rds On - Drain-Source Resistance: | 6.1 mOhms |
| Rise Time: | 134 ns |
| Series: | BSC084P03 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.1 V |
| Automotive | Unknown |
| Channel Type | P |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 14.9 |
| Maximum Drain Source Resistance (mOhm) | 8.4@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | Unknown |
| Process Technology | OptiMOS |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| Typical Fall Time (ns) | 8 |
| Typical Gate Charge @ 10V (nC) | 43 |
| Typical Gate Charge @ Vgs (nC) | 43@10V |
| Typical Input Capacitance @ Vds (pF) | 3190@15V |
| Typical Rise Time (ns) | 134 |
| Typical Turn-Off Delay Time (ns) | 33 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Continuous Drain Current | 78.6 A |
| Maximum Drain Source Voltage | 30 V |
| Mounting Type | SMD |
| Package Type | PG-TDSON-8 |
| Вес, г | 0.454 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
