BSZ520N15NS3GATMA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
580 руб.
от 2 шт. —
470 руб.
от 5 шт. —
404 руб.
от 10 шт. —
375.48 руб.
Добавить в корзину 1 шт.
на сумму 580 руб.
Описание
Электроэлемент
Описание Транзистор МОП n-канальный, полевой, 150В, 21А, 57Вт, PG-TSDSON-8
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 3 ns |
| Forward Transconductance - Min | 11 S |
| Height | 1.1 mm |
| Id - Continuous Drain Current | 21 A |
| Length | 3.3 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TSDSON-8 |
| Packaging | Cut Tape |
| Part # Aliases | BSZ520N15NS3 BSZ52N15NS3GXT G SP000607022 |
| Pd - Power Dissipation | 57 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 12 nC |
| Rds On - Drain-Source Resistance | 42 mOhms |
| Rise Time | 5 ns |
| RoHS | Details |
| Series | OptiMOS 3 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 7 ns |
| Unit Weight | 0.007055 oz |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 3.3 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 21 A |
| Maximum Drain Source Resistance | 52 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 57 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TSDSON |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 8.7 nC @ 10 V |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 3 ns |
| Forward Transconductance - Min: | 11 S |
| Id - Continuous Drain Current: | 21 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | BSZ520N15NS3 G SP000607022 |
| Pd - Power Dissipation: | 57 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 8.7 nC |
| Rds On - Drain-Source Resistance: | 52 mOhms |
| Rise Time: | 5 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
