IRF540S
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530 руб.
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420 руб.
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348 руб.
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327.60 руб.
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET; полевой; 100В; 20А; Idm: 110А; 150Вт; D2PAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 800 |
| Fall Time | 20 ns |
| Height | 4.83 mm |
| Id - Continuous Drain Current | 9.2 A |
| Length | 10.67 mm |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263AB-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 3.7 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 270 mOhms |
| Rise Time | 30 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 8.8 ns |
| Unit Weight | 0.050717 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 9.65 mm |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 28 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-263-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 72 nC |
| Rds On - Drain-Source Resistance: | 77 mOhms |
| Series: | IRF |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Resistance | 77 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 3.7 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Вес, г | 2.477 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 212 КБ
Datasheet
pdf, 118 КБ
Datasheet IRF540SPBF
pdf, 169 КБ
Документация
pdf, 173 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
