SI8816EDB-T2-E1, Trans MOSFET N-CH 30V 2.3A 4-Pin Micro Foot T/R

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27 руб.

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Добавить в корзину 3000 шт. на сумму 81 000 руб.

Номенклатурный номер: 8002413594

Артикул: SI8816EDB-T2-E1

Diodes, Transistors and Thyristors\FET Transistors\MOSFETs

Trans MOSFET N-CH 30V 2.3A 4-Pin Micro Foot T/R

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single Dual Source
ECCN (US)	EAR99
Lead Shape	Ball
Maximum Continuous Drain Current (A)	2.3
Maximum Drain Source Resistance (mOhm)	109@10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	1000
Maximum Gate Source Voltage (V)	±12
Maximum Gate Threshold Voltage (V)	1.4
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	900
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	4
Pin Count	4
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	BGA
Supplier Package	Micro Foot
Typical Fall Time (ns)	10
Typical Gate Charge @ 10V (nC)	4.4
Typical Gate Charge @ Vgs (nC)	4.4@10V\|2.4@4.5V
Typical Input Capacitance @ Vds (pF)	195@15V
Typical Rise Time (ns)	20
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	15
Maximum Continuous Drain Current - (A)	2.3
Maximum Drain Source Resistance - (mOhm)	109@10V
Maximum Drain Source Voltage - (V)	30
Maximum Gate Source Voltage - (V)	??12
Maximum Gate Threshold Voltage - (V)	1.4
Maximum Power Dissipation - (mW)	900
Military	No
Operating Temperature - (??C)	-55~150
Typical Gate Charge @ 10V - (nC)	4.4
Typical Gate Charge @ Vgs - (nC)	4.4@10VI2.4@4.5V
Typical Input Capacitance @ Vds - (pF)	195@15V