ZVN2110GTA, Транзистор N-MOSFET, полевой, 100В, 0,5А, 2Вт, SOT223
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Описание
Описание Транзистор N-MOSFET, полевой, 100В, 0,5А, 2Вт, SOT223 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 500mA (Ta) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT) |
| Package / Case | TO-261-4, TO-261AA |
| Power Dissipation (Max) | 2W (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| REACH Status | REACH Affected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 500 mA |
| Maximum Drain Source Resistance | 4 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2.4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 3.7mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 250 S |
| Id - Continuous Drain Current: | 500 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-223-3 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 4 Ohms |
| Rise Time: | 4 ns |
| Series: | ZVN2110 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 8 ns |
| Typical Turn-On Delay Time: | 4 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Вес, г | 0.12 |
Техническая документация
Дополнительная информация
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